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  • Five functions in one chamber:
    • Plasma Cleaning (PC)
    • Ion Beam Etching (IBE)
    • Reactive Ion Beam Etching (RIBE)
    • Reactive Ion Etching (RIE)
    • Ion Beam Sputter Coating (IBSC)
  • Fast, consistent, high throughput
  • Fully programmable, easy-to-use
  • Oil-free vacuum system


Complete sample preparation in a continuous vacuum
The Model 1030 Automated Sample Preparation (ASaP) System is a powerful, rapid, and flexible tool that significantly enhances the image quality and analytical data derived from scanning electron microscopy (SEM) and transmission electron microscopy (TEM) specimens. It combines the features of

  • Plasma cleaning (PC)
  • Ion beam etching (IBE)
  • Reactive ion beam etching (RIBE)
  • Reactive ion etching (RIE)
  • High-resolution ion beam sputter coating (IBSC).

Plasma cleaning is used to remove organic contamination from the sample. Ion beam etching (IBE) is used to planarize the surface by removing surface defects such as smearing and scratching. Reactive ion etching (RIE) is a chemistry-specific process that enables the selective etching of sample constituents. To eliminate the detrimental effects of charging in the SEM, the Model 1030 ASaP provides high-resolution coating using ion beam sputter coating (IBSC). An oil-free vacuum system ensures optimal performance.

Flexible operation
The operator may choose any process in any sequence, depending on the sample requirements. Operation is fully programmable and automatic, completing sample preparation rapidly enough for high-throughput applications. Complete process sequences or recipes can be readily stored and recalled.

Yields optimal information
Advanced field emission scanning electron microscopy (FESEM) samples in the physical sciences include semiconductor devices, nanotechnology structures, metal matrix composites, thermal barrier coatings, and microelectromechanical systems (MEMS) components. In many cases, features or particle sizes are on the nanometer or sub-nanometer scale. Since FESEM yields resolution to one nanometer at accelerating voltages of 2kV or less, a high level of importance is placed on the sample’s surface characteristics. The Model 1030 is highly effective in optimizing the information obtained from the sample.


Before: Mechanically ground and oxidized cross section of a Cu-based microelectronic material After: Cu-based microelectronic material following plasma cleaning, ion beam etching, reactive ion etching, and ion beam sputter coating
Cu-based microelectronic material following plasma cleaning, ion beam etching, and reactive ion etching Gate oxide in a Cu-based
microelectronic material following
plasma cleaning, ion beam etching,
and reactive ion etching

Download product literature for the Model 1030 ASaP System.

 

© 2008 E.A. Fischione Instruments, Inc.     Site Last Modified April 20, 2008     Site design and programming A to Z Communications, Inc.