Revolutionary ultra-low-energy, concentrated ion beam
Fischione’s Model 1040 NanoMill is an excellent tool for creating the high-quality thin specimens needed for advanced transmission electron microscopy (TEM) imaging and analysis. It is ideal for both post-FIB (focused ion beam) processing and conventional specimen preparation.

Targeted, ultra-low-energy nanomilling
The NanoMill features gaseous ion source technology that results in ion energies as low as 50eV and a beam size as small as 4 microns. It allows specimens to be prepared without amorphization, implantation, or re-deposition. The ion beam can be targeted to a specific area of interest. A secondary electron detector (SED) is used to image the ion-induced secondary electrons that are generated from the targeted area of the specimen.

Automated Operation
The NanoMill is easily programmable. Adjustable ion beam energies, milling angles, specimen rotation, and cryogenic specimen cooling parameters afford maximum flexibility to ensure the optimal preparation of a wide variety of specimens. A vacuum load lock facilitates rapid specimen exchange for high-throughput applications.

Transmission electron microscope (TEM) images of Si

	Bright-field TEM image of a Si cross-section after FIB milling, showing Ga implanted and amorphized layers.
High resolution TEM image of Si in [110] orientation, showing the effect of Ga implantation and surface amorphization on phase contrast imaging.	High resolution TEM image of Si in [110] orientation, demonstrating the effect on phase contrast imaging after Ga implantation and amorphization are removed by NanoMilling.
Si Quantum Dots embedded in an amorphous SiOx Matrix. Because of their size and beam sensitivity, these quantum dots were not visible in the as-prepared FIB lamella. Sample courtesy of J. Mayer, A. Dimyati, RWTH Aachen University and Ernst Ruska-Centre, Research Centre Juelich.	Si Quantum Dots embedded in an amorphous SiOx Matrix. Because of their size and beam sensitivity, these quantum dots were not visible in the as-prepared FIB lamella. Sample courtesy of J. Mayer, A. Dimyati, RWTH Aachen University and Ernst Ruska-Centre, Research Centre Juelich.
Aberration-corrected high-resolution TEM image showing Si atomic structure (dumbbells) clearly resolved after removal of the Ga implanted and amorphized surface layers. Image courtesy Professor Angus Kirkland and Dr. Crispin Hetherington, Oxford University.	Enlarged region of the Si dumbbell image, left. Image courtesy Professor Angus Kirkland and Dr. Crispin Hetherington, Oxford University
	FFT of the Si lattice image presented in figure above, left, showing the higher order specimen periodicities conveyed after removal of the Ga implanted and amorphized surface layers. Image courtesy Professor Angus Kirkland and Dr. Crispin Hetherington, Oxford University.
High resolution TEM image of Si in [110] orientation, showing the effect of Ga implantation and surface amorphization on phase contrast imaging. Image dimensions are 800 nm x 800 nm.	High resolution TEM image of Si in [110] orientation, after Ga implantation and amorphized layers are removed by low energy (200eV) NanoMilling. Image dimensions are 800 nm x 800 nm. Large thin areas where damage has been removed or ameliorated are possible.