Model 1061
SEM Mill
A state-of-the-art ion milling and polishing system. It is compact, precise, and consistently produces high-quality scanning electron microscopy samples in the shortest amount of time for a wide variety of applications. Ideal for both planar sample delayering and cross-section sample polishing.
Ion milling is used in the physical sciences to enhance the sample’s surface characteristics. Inert gas, typically argon, is ionized and then accelerated toward the sample surface. By means of momentum transfer, the impinging ions sputter material from the sample at a controlled rate.
For many of today’s advanced materials, analysis by scanning electron microscopy is an ideal technique for rapidly studying material structure and properties. The SEM Mill is an excellent tool for creating the sample surface characteristics needed for SEM imaging and analysis.
- Two independently adjustable TrueFocus ion sources
- High energy operation for rapid milling; low energy operation for sample polishing
- Ion source maintains its small beam diameter over a wide range of operating energies (100 eV to 10 keV)
- Faraday cups for the direct measurement of beam current from each ion source
- Adjustable 10-inch touch screen with a user-friendly interface for simple setup of milling parameters
- Create pristine cross-section samples with the Cross-section station (optional)
- Independent ion source gas control
- Adjustable milling angle range of 0 to +10°
- In situ viewing and image capture during milling
- Sample rocking or rotation with ion beam sequencing
- Automatic termination by time or temperature
- Liquid nitrogen-cooled sample stage (optional)
- Vacuum or inert gas transfer capsule (optional)
| Part number | Product name | Description |
|---|---|---|
| 041-5500 | Cross-section station (adhesive) | Create pristine cross-section samples for the Model 1061 SEM Mill; masks are adhered to the sample material by adhesives. |
| 041-6338 | Cross-section station (clamp) | Create pristine cross-section samples for the Model 1061 SEM Mill; masks are adhered to the sample material by a clamping mechanism. |
| 041-5880 | Vacuum/inert gas transfer capsule | Transfer samples to and from the Model 1061 SEM Mill in an inert gas (argon) or vacuum environment. |
Solder bump joint sample preparation for failure analyses
Solder bump joint failure analyses of microelectronics devices are critical for ensuring device reliability. Argon broad ion beam milling is an ideal sample preparation technique because it does not introduce strain or structural changes to the sample and preserves the sample in its native state.
Advanced tools and techniques for delayering and cross-sectioning semiconductor devices
Top-down delayering, which is a widely used failure analysis (FA) and quality control technique, is very challenging. The primary challenges are looking through many dissimilar nanoscale layers and attempting to investigate different layers simultaneously. We present a semiconductor device investigation development...
Advances in large-area microelectronic device deprocessing for physical failure analyses and quality control
We discuss advances in semiconductor device deprocessing for product development, failure analysis, and quality control using low-energy, argon broad ion beam (BIB) milling. A unique, automated technique for Ar broad ion beam milling of whole 300 mm wafers is contrasted with tabletop Ar broad ion beam milling...
Elastic and plastic strain measurement using electron backscatter diffraction technique: The influence of sample preparation
We report on elastic strain measurements associated with the (y/y') interfaces in Ni-superalloy by HR-EBSD. We also present plastic strain measurements in titanium alloys and aluminum alloys by conventional EBSD. We report on the influence of two sample preparation methods in HR-EBSD strain mapping for crystalline...
Mechanisms of cracking in pure magnesium during high strain rate plastic deformation
A mechanism of cracking is proposed for pure magnesium, taking into account ASB formation and dynamic recrystallization. Under dynamic high-strain loading conditions, the geometrically necessary dislocation (GND) density increases within the grains. To accommodate the strain, the grains tend to rotate and GND...
Metrology of sample preparation for electron microscopy: Application to strain measurements
Stainless steel was studied regarding its sensitivity to strain-induced structural changes. The microstructural changes caused by sample preparation techniques are revealed by EBSD analyses. A high-resolution EBSD strain measurement comparative study is presented of different sample preparation techniques...
SEM and TEM characterization of plastic deformation structures in aluminum by EBSD, TKD, and PED-based orientation imaging techniques
We have performed a comparative study of different sample preparation protocols on the deformation structures introduced to aluminum samples by controlled uniaxial compression at room temperature to obtain plastic strains of 0, 4, 6, and 15%. As a quantitative metric for deformation, the geometrically necessary...
Solder bump joint failure investigation: From sample preparation to advanced structural characterizations and strain measurements
The detailed sample preparation of a solder joint at the level between a semiconductor package and board is presented; the goal was to target a large sample area that contains multiple solder bumps. The sample preparation method was confirmed by advanced structural characterization and strain measurement.
Strain measurements in industrial applications: A case study of solder bumps in semiconductor devices
This work focuses on solder bump cross-section sample preparation and strain measurement. Two different sample techniques are described and compared: conventional MP using colloidal silica suspension and broad ion beam milling. Sample preparation is then confirmed by advanced structural characterizations and strain...
Top-down delayering by low energy, broad-beam, argon ion milling: A solution for microelectronic device process control and failure ...
We describe a new delayering solution for semiconductor quality control and failure analyses using low-energy, broad beam argon ion milling. The results show a large, delayered area, suitable for high resolution scanning electron microscopy (SEM) investigation and energy dispersive X-ray spectroscopy (EDS)...
Use of microanalysis to better understand the high-temperature corrosion behavior of chromium exposed to multi-oxidant environments
The corrosion behavior of metals and alloys at high temperatures in complex multioxidant environments is of a great interest for achieving extended service performances and improved operation efficiencies. In this basic study, the scaling reactions of pure chromium in several multi-oxidant gas mixtures were assessed.