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Model 1062


Large scale milling of planar and cross-section samples; creates the largest and most uniform flat area achievable by ion milling. Provides the ultimate workflow for environmentally sensitive materials.


A fully automated tabletop argon ion mill that features highly flexible milling parameter adjustment. The instrument offers large-scale milling of planar and cross-section samples.

Samples of up to 50 mm diameter are effectively processed with three ion sources, which creates the largest and most uniform flat area achievable by ion milling. Allows the direct transfer of environmentally sensitive materials to a SEM or FIB.

  • Three independently adjustable TrueFocus ion sources
  • Planar sample sizes up to 50 mm diameter by 25 mm height
  • High-energy operation for rapid milling; low-energy operation for sample polishing
  • Controllable beam diameter over a wide range of operating energies (100 eV to 10 keV)
  • Faraday cups for quantifying ion beam performance
  • Low ion source maintenance
  • Automatic height detection establishes the milling plane, which yields repeatable results
  • Adjustable milling angle range of 0 to +10°
  • Sample viewing and image acquisition during milling (optional)
  • 525X or 1,960X high-magnification microscope (optional)
  • Automatic termination by time or temperature
  • Liquid nitrogen-cooled sample stage (optional)
  • Transfer capsule protects sample at vacuum, in inert gas (argon), or in a cryogenic environment for sensitive samples (optional)
  • Adjustable 254 mm [10 in.] touch screen with a user-friendly interface for the simple setup of milling parameters

Argon milling of bulk and post-FIB specimens for multi-length scale analyses by EBSD, TEM, and APT under controlled environment

Bulk Mg ribbons were prepared using a broad Ar ion beam milling system for the removal of surface artifacts. The bulk sample was then transferred under a protected environment to a FIB system for imaging and EBSD analysis. FIB specimen preparation of the APT specimens followed by concentrated Ar ion beam milling...

Elastic and plastic strain measurement using electron backscatter diffraction technique: The influence of sample preparation

We report on elastic strain measurements associated with the (y/y') interfaces in Ni-superalloy by HR-EBSD. We also present plastic strain measurements in titanium alloys and aluminum alloys by conventional EBSD. We report on the influence of two sample preparation methods in HR-EBSD strain mapping for crystalline...

Mechanisms of cracking in pure magnesium during high strain rate plastic deformation

A mechanism of cracking is proposed for pure magnesium, taking into account ASB formation and dynamic recrystallization. Under dynamic high-strain loading conditions, the geometrically necessary dislocation (GND) density increases within the grains. To accommodate the strain, the grains tend to rotate and GND...

Metrology of sample preparation for electron microscopy: Application to strain measurements

Stainless steel was studied regarding its sensitivity to strain-induced structural changes. The microstructural changes caused by sample preparation techniques are revealed by EBSD analyses. A high-resolution EBSD strain measurement comparative study is presented of different sample preparation techniques...

Millimeter-scale, large uniform area semiconductor device delayering for physical failure analyses and quality control

Broad argon ion beam milling produces excellent surface quality over a millimeter-scale area.

SEM and TEM characterization of plastic deformation structures in aluminum by EBSD, TKD, and PED-based orientation imaging techniques

We have performed a comparative study of different sample preparation protocols on the deformation structures introduced to aluminum samples by controlled uniaxial compression at room temperature to obtain plastic strains of 0, 4, 6, and 15%. As a quantitative metric for deformation, the geometrically necessary...

Solder bump joint failure investigation: From sample preparation to advanced structural characterizations and strain measurements

The detailed sample preparation of a solder joint at the level between a semiconductor package and board is presented; the goal was to target a large sample area that contains multiple solder bumps. The sample preparation method was confirmed by advanced structural characterization and strain measurement.

Strain measurements in industrial applications: A case study of solder bumps in semiconductor devices

This work focuses on solder bump cross-section sample preparation and strain measurement. Two different sample techniques are described and compared: conventional MP using colloidal silica suspension and broad ion beam milling. Sample preparation is then confirmed by advanced structural characterizations and strain...

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