Critical dimensions (CDs) of microscopic patterned wafer features are measured by scanning electron microscope during the semiconductor manufacturing process. In conventional CD-SEM specimen preparation, individual dies are cut from a wafer and then each specimen is prepared by a traditional ion milling system, one specimen at a time.

With the WaferMill solution, you can delayer multiple pre-selected regions on a full wafer from the top down. The entire process is fully automated; there is no need to manually touch a wafer. The WaferMill solution supports metrology, including CD-SEM sample preparation.

• Selected-area milling on full 300 mm wafers
• Top-down delayering
• Expose multiple device layers and structures
• For use in multiple areas of a semiconductor fabrication facility: research and development, process control, yield enhancement, and failure analysis